| PART |
Description |
Maker |
| MC-4R512FKE8D MC-4R512FKE8D-653 MC-4R512FKE8D-745 |
Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 18-BIT)
|
ELPIDA MEMORY INC
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| MB81EDS51654510 |
512M Bit (4 bank x 2M word x 64 bit) Consumer Applications Specific Memory for SiP
|
Fujitsu Component Limited.
|
| K9K2G08U0M K9K2G08U0M-YCB0 K9K2G16U0M-PCB0 K9K2G16 |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HM5257165B HM5257165BTD-A6 HM5257165B-A6 HM5257165 |
512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword × 16-bit × 4-bank/16-Mword × 8-bit × 4-bank /32-Mword × 4-bit × 4-bank PC/133, PC/100 SDRAM
Circular Connector; Body Material:Aluminum; Series:PT06; Number of Contacts:30; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Circular Contact Gender:Pin; Insert Arrangement:18-30
16 M EDO DRAM(2-Mword*8-bit) 2K Refresh
Circular Connector; No. of Contacts:32; Series:; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:18; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:18-32
512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 16-bit 4-bank/16-Mword 8-bit 4-bank /32-Mword 4-bit 4-bank PC/133/ PC/100 SDRAM
CABLE ASSEMBLY
512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 16-bit 4-bank/16-Mword 8-bit 4-bank /32-Mword 4-bit 4-bank PC/133, PC/100 SDRAM
|
Elpida Memory, Inc.
|
| TC58DVM92A1FT00 |
512M-Bit CMOS NAND EPROM
|
Toshiba
|
| HX421S13IB-4 |
4GB 512M x 64-Bit DDR4-2133
|
List of Unclassifed Man...
|
| KVR13LSE9S8-4 |
4GB 1Rx8 512M x 72-Bit PC3L-10600
|
List of Unclassifed Man...
|
| MX25L51245GXDI10G MX25L51245GZ2I10G MX25L51245GMI1 |
3V 512M-BIT [x 1/x 2/x 4] CMOS MXSMIO (SERIAL MULTI I/O)
|
Macronix International
|
| KVR13LR9S8-4 |
4GB 1Rx8 512M x 72-Bit PC3L-10600
|
List of Unclassifed Man...
|
| KVR16LE11S8-4 |
4GB 1Rx8 512M x 72-Bit PC3L-12800
|
List of Unclassifed Man...
|
| K9G4G08U0A-P K9G4G08X0A K9G4G08U0A-I K9G4G08B0A |
512M x 8 Bit / 1G x 8 Bit NAND Flash Memory
|
Samsung semiconductor
|
| MX66U51235FMI10G MX66U51235FZ4I10G |
1.8V 512M-BIT [x 1/x 2/x 4] CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
